Tunneling current modulation in atomically precise graphene nanoribbon heterojunctions

Graphene nanoribbon heterojunctions and heterostructures

Raman Fingerprints of Atomically Precise Graphene Nanoribbons

Bottom-up approaches allow the production of ultranarrow and atomically precise graphene nanoribbons (GNRs) with electronic and optical properties controlled by the specific atomic structure. Combining Raman spectroscopy and ab initio simulations, we show that GNR width, edge geometry, and functional groups all influence their Raman spectra. The low-energy spectral region below 1000 cm(-1) is p...

Josephson Current For a Graphene Nanoribbon Using a Lattice Model

A tight binding approach based on the Bogoliubov-de Gennes approach has been used to calculate the DC Josephson current for a lattice model for S-GNR-S junctions , for short junctions with respect to superconducting coherence length. We calculate the phase, length, width and chemical potential dependence at the Josephson junction and discuss the similarities and differences with regard to the t...

Non-Linear Temperature Dependence in Graphene Nanoribbon Tunneling Transistors

It is usually assumed that tunneling current is fairly independent of temperature. By performing an atomistic transport simulation, we show, to the contrary, that the subthreshold tunneling current in a graphene nanoribbon (GNR) band-to-band tunneling transistor (TFET) should show significant and nonlinear temperature dependence. Furthermore, the nature of this non-linearity changes as a functi...

Computational study of tunneling transistor based on graphene nanoribbon.

Tunneling field-effect transistors (FETs) have been intensely explored recently due to its potential to address power concerns in nanoelectronics. The recently discovered graphene nanoribbon (GNR) is ideal for tunneling FETs due to its symmetric bandstructure, light effective mass, and monolayer-thin body. In this work, we examine the device physics of p-i-n GNR tunneling FETs using atomistic q...